NSN: 5962-01-035-7476

Technical Characteristics

• Memory Device Type

  rom

• Time Rating Per Chacteristic

  50.00 nanoseconds maximum propagation delay time,low to high level output and 50.00 nanoseconds maximum propagation delay time,high to low level output

• Voltage Rating And Type Per Characteristic

  m1.5 volts minimum power source and 5.5 volts maximum power source

• Word Quantity

  32

• Output Logic Form

  transistor-transistor logic

• Inclosure Configuration

  dual-in-line

• End Item Identification

  4920005071587 interface device

• Storage Temp Range

  m65.0/p150.0 deg celsius

• Operating Temp Range

  m0.0/p70.0 deg celsius

• Terminal Type And Quantity

  16 printed circuit

• Test Data Document

  14210-601010 drawing

• Unpackaged Unit Weight

  2.2 grams

• Terminal Surface Treatment

  solder

• Case Outline Source And Designator

  m0-001-ag joint electron device engineering council

• Bit Quantity

  256

• Input Circuit Pattern

  6 input

• Inclosure Material

  ceramic and glass

• Features Provided

  hermetically sealed and monolithic and positive outputs and w/enable and programmable and programmed and bipolar and w/buffered output and w/decoded output and expandable and wire-or outputs and w/disable

• Maximum Power Dissipation Rating

  625.0 milliwatts

• Body Height

  0.120 inches minimum and 0.195 inches maximum

• Body Width

  0.245 inches minimum and 0.300 inches maximum

• Body Length

  0.750 inches minimum and 0.795 inches maximum