NSN: 5962-01-036-1555

Technical Characteristics

• Word Quantity (Non-Core)

  256

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Current Rating Per Characteristic

  130.00 milliamperes reverse current, dc absolute

• Maximum Power Dissipation Rating

  739.0 milliwatts

• Time Rating Per Chacteristic

  75.00 nanoseconds maximum delay

• Memory Device Type

  prom

• Test Data Document

  96906-mil-std-883 standard (includes industry or association standards, individual manufactureer standards, etc.).

• Input Circuit Pattern

  10 input

• Terminal Type And Quantity

  16 printed circuit

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Case Outline Source And Designator

  d-2 mil-m-38510

• Inclosure Material

  ceramic

• Terminal Surface Treatment

  solder

• Voltage Rating And Type Per Characteristic

  7.0 volts maximum power source

• Features Provided

  burn in and hermetically sealed and programmed

• Inclosure Configuration

  dual-in-line

• Output Logic Form

  transistor-transistor logic

• Bit Quantity (Non-Core)

  1024