NSN: 5962-01-037-8593

Technical Characteristics

• Inclosure Configuration

  dual-in-line

• Voltage Rating And Type Per Characteristic

  5.5 volts maximum power source

• Output Logic Form

  transistor-transistor logic

• Bit Quantity (Non-Core)

  1024

• Test Data Document

  36659-13046426l drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)

• Word Quantity (Non-Core)

  256

• Time Rating Per Chacteristic

  35.00 nanoseconds maximum propagation delay time, low to high level output and 35.00 nanoseconds maximum propagation delay time, high to low level output

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Features Provided

  monolithic and programmed and programmable and w/disable and w/decoded output and w/buffered output and w/storage and w/enable and 3-state output and bipolar and positive outputs and hermetically sealed and high speed

• Body Height

  0.120 inches minimum and 0.160 inches maximum

• Body Width

  0.240 inches minimum and 0.280 inches maximum

• Input Circuit Pattern

  10 input

• Terminal Type And Quantity

  16 printed circuit

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Memory Device Type

  rom

• Body Length

  0.745 inches minimum and 0.785 inches maximum

• Maximum Power Dissipation Rating

  625.0 milliwatts

• Terminal Surface Treatment

  solder

• Inclosure Material

  ceramic and glass

• Case Outline Source And Designator

  -0-001-ae joint electron device engineering council