NSN: 5962-01-039-7333

Technical Characteristics

• Case Outline Source And Designator

  -0-001-ag joint electron device engineering council

• Inclosure Configuration

  dual-in-line

• Voltage Rating And Type Per Characteristic

  5.5 volts maximum power source

• Word Quantity (Non-Core)

  512

• Output Logic Form

  transistor-transistor logic

• Operating Temp Range

  +0.0/+75.0 deg celsius

• Inclosure Material

  ceramic and glass

• Terminal Surface Treatment

  solder

• Maximum Power Dissipation Rating

  625.0 milliwatts

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Terminal Type And Quantity

  16 printed circuit

• Input Circuit Pattern

  10 input

• Test Data Document

  11530-278539 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)

• Memory Device Type

  ram

• Body Length

  0.750 inches minimum and 0.795 inches maximum

• Body Height

  0.120 inches minimum and 0.195 inches maximum

• Features Provided

  monolithic and high speed and bipolar and hermetically sealed and w/storage and w/enable and w/disable and w/decoded output and w/buffered output and positive outputs and programmable and programmed and 3-state output

• Memory Capacity

  unknown

• Bit Quantity (Non-Core)

  2048

• Body Width

  0.245 inches minimum and 0.300 inches maximum

• Time Rating Per Chacteristic

  30.00 nanoseconds maximum propagation delay time, low to high level output and 30.00 nanoseconds maximum propagation delay time, high to low level output

• End Item Identification

  cheyenne aircraft model 427m