NSN: 5962-01-042-5451

Technical Characteristics

• Memory Device Type

  rom

• Terminal Surface Treatment

  solder

• Word Quantity

  512

• Bit Quantity

  2048

• Inclosure Configuration

  dual-in-line

• Features Provided

  hermetically sealed and monolithic and positive outputs and programmable and programmed and w/decoded output and w/enable and w/storage and bipolar and w/open collector and high speed and w/disable

• Storage Temp Range

  -65.0 to 150.0 deg celsius

• Operating Temp Range

  -0.0 to 75.0 deg celsius

• Terminal Type And Quantity

  16 printed circuit

• Test Data Document

  05869-726008-1 drawing

• Unpackaged Unit Weight

  2.2 grams

• Time Rating Per Chacteristic

  35.00 nanoseconds maximum propagation delay time, low to high level output and 35.00 nanoseconds maximum propagation delay time, high to low level output

• Voltage Rating And Type Per Characteristic

  -1.5 volts minimum power source and 5.5 volts maximum power source

• Case Outline Source And Designator

  d-2 mil-m-38510

• Input Circuit Pattern

  10 input

• Output Logic Form

  transistor-transistor logic

• Inclosure Material

  ceramic and glass

• Maximum Power Dissipation Rating

  500.0 milliwatts

• Body Height

  0.140 inches minimum and 0.185 inches maximum

• Body Width

  0.220 inches minimum and 0.310 inches maximum

• Body Length

  0.896 inches maximum