NSN: 5962-01-051-8526

Technical Characteristics

• Memory Device Type

  rom

• Time Rating Per Chacteristic

  30.00 nanoseconds maximum propagation delay time,low to high level output and 30.00 nanoseconds maximum propagation delay time,high to low level output

• Voltage Rating And Type Per Characteristic

  5.5 volts maximum power source

• Terminal Surface Treatment

  solder

• Case Outline Source And Designator

  m0-001-ag joint electron device engineering council

• Word Quantity

  512

• Bit Quantity

  2048

• Inclosure Configuration

  dual-in-line

• Features Provided

  hermetically sealed and monolithic and negative outputs and positive outputs and bipolar and high speed and programmable and programmed and w/buffered output and w/decoded output and w/disable and w/enable and w/storage and 3-state output

• End Item Identification

  countermeasures set type an/alq-99e(v)

• Body Length

  0.750 inches minimum and 0.795 inches maximum

• Terminal Type And Quantity

  16 printed circuit

• Test Data Document

  03640-6086173 drawing

• Unpackaged Unit Weight

  2.2 grams

• Input Circuit Pattern

  10 input

• Output Logic Form

  transistor-transistor logic

• Inclosure Material

  ceramic and glass

• Storage Temp Range

  m65.0/p150.0 deg celsius

• Operating Temp Range

  m55.0/p125.0 deg celsius

• Maximum Power Dissipation Rating

  650.0 milliwatts

• Body Height

  0.120 inches minimum and 0.195 inches maximum

• Body Width

  0.245 inches minimum and 0.300 inches maximum