NSN: 5962-01-068-2632

Technical Characteristics

• Maximum Power Dissipation Rating

  170.0 milliwatts

• Time Rating Per Chacteristic

  35.00 nanoseconds maximum propagation delay time, low to high level output and 35.00 nanoseconds maximum propagation delay time, high to low level output

• Features Provided

  monolithic and positive outputs and hermetically sealed and expandable

• Input Circuit Pattern

  dual 4 input

• Design Function And Quantity

  2 gate, nand

• Terminal Type And Quantity

  14 printed circuit

• Output Logic Form

  diode-transistor logic

• Body Width

  0.220 inches minimum and 0.280 inches maximum

• Case Outline Source And Designator

  t0.116 joint electron device engineering council

• Body Height

  0.140 inches minimum and 0.180 inches maximum

• Terminal Surface Treatment

  solder

• Storage Temp Range

  -55.0/+125.0 deg celsius

• Operating Temp Range

  +0.0/+75.0 deg celsius

• Body Length

  0.660 inches minimum and 0.785 inches maximum

• Inclosure Configuration

  dual-in-line

• Voltage Rating And Type Per Characteristic

  8.0 volts maximum power source

• Inclosure Material

  plastic