NSN: 5962-01-072-8660

Technical Characteristics

• Operating Temp Range

  -55.0/+125.0 deg celsius

• ~1

  mmable and programmed and bipolar and high speed

• Inclosure Configuration

  dual-in-line

• Bit Quantity

  2048

• Word Quantity

  512

• Time Rating Per Chacteristic

  90.00 nanoseconds maximum propagation delay time, low to high level output and 9

• Unpackaged Unit Weight

  2.2 grams

• Body Length

  0.735 inches minimum and 0.830 inches maximum

• Body Width

  0.291 inches maximum

• Body Height

  0.140 inches minimum and 0.180 inches maximum

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Features Provided

  hermetically sealed and monolithic and positive outputs and w/storage and progra

• Inclosure Material

  ceramic and glass

• Output Logic Form

  transistor-transistor logic

• Input Circuit Pattern

  10 input

• Terminal Surface Treatment

  solder

• Voltage Rating And Type Per Characteristic

  5.5 volts maximum power source

• ~1

  0.00 nanoseconds maximum propagation delay time, high to low level output

• Memory Device Type

  rom

• Terminal Type And Quantity

  16 printed circuit