NSN: 5962-01-099-6383

Technical Characteristics

• Inclosure Configuration

  dual-in-line

• Features Provided

  positive outputs and w/enable and hermetically sealed and monolithic and w/open collector and 3-state output

• Terminal Type And Quantity

  18 printed circuit

• Inclosure Material

  ceramic and glass

• Input Circuit Pattern

  12 input

• Terminal Surface Treatment

  solder

• Memory Device Type

  rom

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Time Rating Per Chacteristic

  40.00 nanoseconds maximum propagation delay time, low to high level output and 40.00 nanoseconds maximum propagation delay time, high to low level output

• Body Height

  0.145 inches minimum and 0.175 inches maximum

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Test Data Document

  11627-21008 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)

• Word Quantity (Non-Core)

  1024

• Bit Quantity (Non-Core)

  4096

• Output Logic Form

  transistor-transistor logic

• Body Length

  0.882 inches minimum and 0.925 inches maximum

• Voltage Rating And Type Per Characteristic

  5.5 volts maximum power source

• Body Width

  0.310 inches maximum