NSN: 5962-01-105-1323
Microcircuits, Electronic
MICROCIRCUIT,MEMORY
- Lockheed Martin Corporation
- Ge Aviation Systems Llc
- Northrop Grumman Guidance And
- Litton Systems Inc. Div Navigation
- Itt Corporation
- Johanson Dielectrics Inc
- Ge Aviation Systems Llc
- Mmi/Amd
- Mmi/Amd
- Mmi/Amd
- Mmi/Amd
- Cypress Semiconductor Corporation
- Us Army Communications &
- Northrop Grumman Systems Corporation
- Bae Systems Information And
5962 - Microcircuits, Electronic
MICROCIRCUIT,MEMORY
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Technical Characteristics
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Memory Device Type
first-in first-out
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Operating Temp Range
-55.0/+125.0 deg celsius
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Word Quantity (Non-Core)
64
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Body Length
0.740 inches minimum and 0.810 inches maximum
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Body Height
0.110 inches minimum and 0.140 inches maximum
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Memory Capacity
unknown
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Terminal Type And Quantity
16 printed circuit
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Storage Temp Range
-65.0/+150.0 deg celsius
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Inclosure Material
ceramic
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Terminal Surface Treatment
solder
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Test Data Document
92755-900059 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)
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Inclosure Configuration
dual-in-line
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Body Width
0.280 inches minimum and 0.310 inches maximum
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Voltage Rating And Type Per Characteristic
5.5 volts maximum power source
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Input Circuit Pattern
7 input
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Bit Quantity (Non-Core)
256
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Features Provided
programmed and hermetically sealed and programmable and resettable
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Output Logic Form
transistor-transistor logic
Related Parts by Category
Related Manufacturers
- Lockheed Martin Corporation
- Ge Aviation Systems Llc
- Northrop Grumman Guidance And
- Litton Systems Inc. Div Navigation
- Itt Corporation
- Johanson Dielectrics Inc
- Ge Aviation Systems Llc
- Mmi/Amd
- Mmi/Amd
- Mmi/Amd
- Mmi/Amd
- Cypress Semiconductor Corporation
- Us Army Communications &
- Northrop Grumman Systems Corporation
- Bae Systems Information And