NSN: 5962-01-106-0645

Technical Characteristics

• Storage Temp Range

  m65.0/p150.0 deg celsius

• Input Circuit Pattern

  9 input

• Terminal Surface Treatment

  solder

• Voltage Rating And Type Per Characteristic

  5.5 volts maximum power source

• Time Rating Per Chacteristic

  60.00 nanoseconds maximum propagation delay time,low to high level output

• Memory Device Type

  rom

• Maximum Power Dissipation Rating

  634.8 milliwatts

• Operating Temp Range

  m0.0/p75.0 deg celsius

• Features Provided

  monolithic and programmable and 3-state output

• Inclosure Material

  ceramic

• Inclosure Configuration

  dual-in-line

• Output Logic Form

  transistor-transistor logic

• Bit Quantity

  4096

• Word Quantity

  512

• Test Data Document

  32602-700075 drawing

• Terminal Type And Quantity

  24 printed circuit