NSN: 5962-01-108-4756

Technical Characteristics

• Test Data Document

  13499-351-7769 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)

• Features Provided

  monolithic and hermetically sealed and programmable and bipolar and programmed and 3-state output

• Inclosure Configuration

  dual-in-line

• Voltage Rating And Type Per Characteristic

  5.5 volts maximum power source

• Output Logic Form

  transistor-transistor logic

• Bit Quantity (Non-Core)

  1024

• Word Quantity (Non-Core)

  256

• Time Rating Per Chacteristic

  35.00 nanoseconds maximum propagation delay time, low to high level output

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Maximum Power Dissipation Rating

  512.0 milliwatts

• Body Width

  0.245 inches minimum and 0.300 inches maximum

• Body Height

  0.120 inches minimum and 0.195 inches maximum

• Body Length

  0.750 inches minimum and 0.795 inches maximum

• Input Circuit Pattern

  10 input

• Terminal Type And Quantity

  16 printed circuit

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Memory Device Type

  rom

• Inclosure Material

  ceramic

• Case Outline Source And Designator

  mo-001-ag joint electron device engineering council

• Terminal Surface Treatment

  solder