NSN: 5962-01-108-8797
Microcircuits, Electronic
MICROCIRCUIT,MEMORY
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5962 - Microcircuits, Electronic
MICROCIRCUIT,MEMORY
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Technical Characteristics
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~1
data on certain environmental and performanc
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Test Data Document
81349-mil-m-38510 specification (includes engineering type bulletins, brochures,etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general type
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Inclosure Material
ceramic and glass
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Features Provided
w/enable and schottky and monolithic and positive outputs and bipolar and hermetically sealed and 3-state output
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Inclosure Configuration
dual-in-line
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Terminal Type And Quantity
24 printed circuit
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Voltage Rating And Type Per Characteristic
5.5 volts maximum power source
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Input Circuit Pattern
14 input
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Body Length
1.290 inches maximum
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Output Logic Form
transistor-transistor logic
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Body Width
0.500 inches minimum and 0.610 inches maximum
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Word Quantity (Non-Core)
1024
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Time Rating Per Chacteristic
err-060 nominal hand pull and err-060 nominal hand
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Operating Temp Range
-55.0/+125.0 deg celsius
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Body Height
0.150 inches minimum and 0.205 inches maximum
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Specification/Standard Data
81349-mil-m-38510/209 government specification
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Memory Capacity
unknown
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Bit Quantity (Non-Core)
8192
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Storage Temp Range
-65.0/+150.0 deg celsius
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Memory Device Type
rom
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Case Outline Source And Designator
d-3 mil-m-38510
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Terminal Surface Treatment
solder
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Maximum Power Dissipation Rating
1.4 watts
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Related Manufacturers
- Honeywell International Inc
- Fairchild Semiconductor Corp
- Rockwell Collins Inc.
- Defense Electronics Supply Center
- Dla Land And Maritime
- Philips Semiconductors Inc
- Cae-Link Corp
- Northrop Grumman Corp
- Northrop Grumman Corp
- National Semiconductor Corporation
- Raytheon Technical Services Company
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- Bae Systems Information And
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