NSN: 5962-01-111-0905

Technical Characteristics

• Time Rating Per Chacteristic

  40.00 nanoseconds maximum propagation delay time, low to high level output and 40.00 nanoseconds maximum propagation delay time, high to low level output

• Memory Device Type

  prom

• Input Circuit Pattern

  10 input

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Body Width

  0.220 inches minimum and 0.300 inches maximum

• Terminal Surface Treatment

  solder

• Inclosure Material

  ceramic and glass

• Terminal Type And Quantity

  20 printed circuit

• Inclosure Configuration

  dual-in-line

• Voltage Rating And Type Per Characteristic

  5.5 volts maximum power source

• Word Quantity (Non-Core)

  512

• Maximum Power Dissipation Rating

  800.0 milliwatts

• Output Logic Form

  transistor-transistor logic

• Body Length

  1.000 inches maximum

• Body Height

  0.165 inches minimum and 0.210 inches maximum

• Test Data Document

  07187-4038322 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)

• Bit Quantity (Non-Core)

  4096

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Features Provided

  positive outputs and monolithic and w/enable and hermetically sealed and 3-state output