NSN: 5962-01-112-5325

Technical Characteristics

• Output Logic Form

  transistor-transistor logic

• Inclosure Configuration

  dual-in-line

• Current Rating Per Characteristic

  27.00 milliamperes reverse current, dc absolute

• Design Function And Quantity

  2 buffer, nand

• Terminal Surface Treatment

  solder

• Features Provided

  burn in and monolithic and hermetically sealed and positive outputs

• Inclosure Material

  ceramic

• Body Width

  0.280 inches maximum

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Maximum Power Dissipation Rating

  148.0 milliwatts

• Time Rating Per Chacteristic

  22.00 nanoseconds maximum delay

• Test Data Document

  96906-mil-std-883 standard (includes industry or association standards, individual manufactureer standards, etc.).

• Body Length

  0.785 inches maximum

• Voltage Rating And Type Per Characteristic

  -0.5 volts minimum power source and 7.0 volts maximum power source

• Terminal Type And Quantity

  14 printed circuit

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Input Circuit Pattern

  dual 4 input

• Body Height

  0.180 inches maximum