NSN: 5962-01-136-0888

Technical Characteristics

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Body Length

  0.840 inches maximum

• Inclosure Material

  ceramic

• Terminal Surface Treatment

  solder

• Voltage Rating And Type Per Characteristic

  7.0 volts maximum power source

• Inclosure Configuration

  dual-in-line

• Time Rating Per Chacteristic

  85.00 nanoseconds maximum propagation delay time, high to low level output

• Body Width

  0.310 inches maximum

• Word Quantity (Non-Core)

  512

• Output Logic Form

  transistor-transistor logic

• Maximum Power Dissipation Rating

  794.0 milliwatts

• Features Provided

  hermetically sealed and w/active pull-up and programmable and high impedance and burn in and thin film and monolithic and bipolar and schottky and 3-state output and tested to mil-std-883

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Case Outline Source And Designator

  d-2 mil-m-38510

• Body Height

  0.185 inches maximum

• Current Rating Per Characteristic

  140.00 milliamperes reverse current, dc absolute

• Memory Device Type

  prom

• Bit Quantity (Non-Core)

  2048

• Test Data Document

  96906-mil-std-883 standard (includes industry or association standards, individual manufactureer standards, etc.).

• Input Circuit Pattern

  10 input

• Terminal Type And Quantity

  16 printed circuit