NSN: 5962-01-155-5160

Technical Characteristics

• ~1

  mable and programmed and bipolar and w/enable and w/decoded output and w/buffere

• ~2

  d output

• Inclosure Material

  ceramic and glass

• Output Logic Form

  transistor-transistor logic

• Input Circuit Pattern

  10 input

• Bit Quantity

  1024

• Terminal Surface Treatment

  solder

• Voltage Rating And Type Per Characteristic

  5.5 volts maximum power source

• ~1

  5.00 nanoseconds maximum propagation delay time, high to low level output

• Time Rating Per Chacteristic

  75.00 nanoseconds maximum propagation delay time, low to high level output and 7

• Memory Device Type

  rom

• Terminal Type And Quantity

  16 printed circuit

• Specification/Standard Data

  81349-mil-m-38510/203 government specification

• Body Width

  0.220 inches minimum and 0.310 inches maximum

• Maximum Power Dissipation Rating

  739.0 milliwatts

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Body Length

  0.840 inches maximum

• Body Height

  0.140 inches minimum and 0.185 inches maximum

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Features Provided

  hermetically sealed and monolithic and positive outputs and schottky and program

• Inclosure Configuration

  dual-in-line

• Word Quantity

  256

• Case Outline Source And Designator

  d-2 mil-m-38510

• Unpackaged Unit Weight

  2.2 grams

• Test Data Document

  81349-mil-m-38510 specification