NSN: 5962-01-159-0475

Technical Characteristics

• ~1

  data on certain environmental and performanc

• Test Data Document

  81349-mil-m-38510 specification (includes engineering type bulletins, brochures,etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general type

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Special Features

  alter in accordance w/g.5. drawing 77a102235p1

• Memory Device Type

  rom

• Case Outline Source And Designator

  d-3 mil-m-38510

• Inclosure Material

  ceramic

• Terminal Surface Treatment

  solder

• Inclosure Configuration

  dual-in-line

• Features Provided

  monolithic and hermetically sealed and programmed and bipolar and schottky and programmable and positive outputs

• Input Circuit Pattern

  13 input

• Terminal Type And Quantity

  24 printed circuit

• Voltage Rating And Type Per Characteristic

  5.5 volts maximum power source

• Word Quantity (Non-Core)

  512

• Body Length

  1.290 inches maximum

• Maximum Power Dissipation Rating

  1.02 watts

• Output Logic Form

  transistor-transistor logic

• Body Height

  0.210 inches maximum

• Body Width

  0.500 inches minimum and 0.610 inches maximum

• Bit Quantity (Non-Core)

  4096

• Time Rating Per Chacteristic

  err-060 nominal hand pull and err-060 nominal hand

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Specification/Standard Data

  81349-mil-m-38510/208/usaf/ government specification

• Memory Capacity

  unknown