NSN: 5962-01-170-3859

Technical Characteristics

• ~1

  data on certain environmental and performanc

• Test Data Document

  81349-mil-m-38510 specification (includes engineering type bulletins, brochures,etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general type

• Word Quantity (Non-Core)

  256

• Input Circuit Pattern

  6 input

• Bit Quantity (Non-Core)

  2048

• Features Provided

  high impedance and hermetically sealed and programmable and bipolar and low level

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Memory Device Type

  rom

• Case Outline Source And Designator

  d-3 mil-m-38510

• Inclosure Material

  ceramic

• Terminal Surface Treatment

  solder

• Inclosure Configuration

  dual-in-line

• Terminal Type And Quantity

  24 printed circuit

• Voltage Rating And Type Per Characteristic

  5.5 volts nominal power source

• Output Logic Form

  transistor-transistor logic