NSN: 5962-01-172-5803

Technical Characteristics

• Inclosure Material

  ceramic

• Inclosure Configuration

  dual-in-line

• Output Logic Form

  transistor-transistor logic

• Word Quantity

  32

• Case Outline Source And Designator

  d-2 mil-m-38510

• Terminal Surface Treatment

  solder

• Time Rating Per Chacteristic

  80.00 nanoseconds maximum propagation delay time,low to high level output and 80.00 nanoseconds maximum propagation delay time,high to low level output

• Memory Device Type

  rom

• Unpackaged Unit Weight

  2.2 grams

• Body Width

  0.220 inches minimum and 0.310 inches maximum

• Features Provided

  hermetically sealed and burn in and programmable and w/enable and schottky and 3-state output

• Input Circuit Pattern

  6 input

• Bit Quantity

  256

• Voltage Rating And Type Per Characteristic

  5.5 volts nominal power source

• Test Data Document

  96906-mil-std-883 standard

• Terminal Type And Quantity

  16 printed circuit

• Body Length

  0.840 inches maximum

• Body Height

  0.185 inches maximum

• Maximum Power Dissipation Rating

  739.0 milliwatts

• Operating Temp Range

  m55.0/p125.0 deg celsius

• Storage Temp Range

  m65.0/p150.0 deg celsius