NSN: 5962-01-178-6882
Microcircuits, Electronic
MICROCIRCUIT,MEMORY
- Honeywell International Inc
- U S Army Armament Research &
- Intel Corp
- Honeywell Intl Inc
- Sgs-Thomson Microelectronics Inc
- Integrated Device Technology Inc
- Integrated Device Technology Inc
- Dla Land And Maritime
- Dla Land And Maritime
- Bae Systems Information And
- Bae Systems Information And
- Northrop Grumman Systems Corporation
- Cubic Defense Applications Inc.
- Raytheon Company
5962 - Microcircuits, Electronic
MICROCIRCUIT,MEMORY
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Technical Characteristics
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Bit Quantity (Non-Core)
16384
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Body Width
0.300 inches minimum and 0.320 inches maximum
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Inclosure Configuration
dual-in-line
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Time Rating Per Chacteristic
70.00 nanoseconds maximum propagation delay time, low to high level output
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Terminal Type And Quantity
20 printed circuit
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Word Quantity (Non-Core)
4096
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Terminal Surface Treatment
solder
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Maximum Power Dissipation Rating
1.0 watts
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Inclosure Material
ceramic
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Storage Temp Range
-65.0/+150.0 deg celsius
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Memory Device Type
ram
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Body Height
0.088 inches minimum and 0.108 inches maximum
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Voltage Rating And Type Per Characteristic
-0.5 volts minimum power source and 7.0 volts maximum power source
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Output Logic Form
metal oxide-semiconductor logic
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Input Circuit Pattern
18 input
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Operating Temp Range
-55.0/+125.0 deg celsius
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Test Data Document
67268-5962-86705 standard (includes industry or association standards, individual manufactureer standards, etc.).
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Body Length
0.985 inches minimum and 1.015 inches maximum
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Features Provided
monolithic and electrostatic sensitive and hermetically sealed
Related Parts by Category
Related Manufacturers
- Honeywell International Inc
- U S Army Armament Research &
- Intel Corp
- Honeywell Intl Inc
- Sgs-Thomson Microelectronics Inc
- Integrated Device Technology Inc
- Integrated Device Technology Inc
- Dla Land And Maritime
- Dla Land And Maritime
- Bae Systems Information And
- Bae Systems Information And
- Northrop Grumman Systems Corporation
- Cubic Defense Applications Inc.
- Raytheon Company