NSN: 5962-01-179-8530

Technical Characteristics

• Features Provided

  hermetically sealed and monolithic and programmable and schottky and high speed and 3-state output and electrostatic sensitive

• Voltage Rating And Type Per Characteristic

  m0.5 volts minimum power source and 7.0 volts maximum power source

• Time Rating Per Chacteristic

  45.00 nanoseconds maximum propagation delay time,low to high level output and 45.00 nanoseconds maximum propagation delay time,high to low level output

• Test Data Document

  96906-mil-std-883 standard

• Body Length

  1.060 inches maximum

• Body Width

  0.220 inches minimum and 0.310 inches maximum

• Body Height

  0.185 inches maximum

• Operating Temp Range

  m55.0/p125.0 deg celsius

• Storage Temp Range

  m65.0/p150.0 deg celsius

• Inclosure Material

  ceramic

• Inclosure Configuration

  dual-in-line

• Output Logic Form

  transistor-transistor logic

• Input Circuit Pattern

  10 input

• Terminal Surface Treatment

  solder

• Memory Device Type

  rom

• Unpackaged Unit Weight

  2.4 grams

• Terminal Type And Quantity

  20 printed circuit