NSN: 5962-01-190-7325

Technical Characteristics

• Inclosure Material

  ceramic

• Case Outline Source And Designator

  d-3 mil-m-38510

• Time Rating Per Chacteristic

  90.00 nanoseconds maximum propagation delay time, low to high level output and 90.00 nanoseconds maximum propagation delay time, high to low level output

• Memory Device Type

  rom

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Test Data Document

  96906-mil-std-883 standard (includes industry or association standards, individual manufactureer standards, etc.).

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Bit Quantity (Non-Core)

  4096

• Body Width

  0.500 inches minimum and 0.610 inches maximum

• Body Height

  0.210 inches maximum

• Output Logic Form

  transistor-transistor logic

• Maximum Power Dissipation Rating

  1.02 watts

• Body Length

  1.290 inches maximum

• Word Quantity (Non-Core)

  512

• Terminal Type And Quantity

  24 printed circuit

• Input Circuit Pattern

  13 input

• Inclosure Configuration

  dual-in-line

• Features Provided

  monolithic and bipolar and schottky and programmable and high impedance

• Voltage Rating And Type Per Characteristic

  7.0 volts maximum power source

• Terminal Surface Treatment

  solder