NSN: 5962-01-192-0212

Technical Characteristics

• Voltage Rating And Type Per Characteristic

  5.5 volts nominal power source

• Output Logic Form

  transistor-transistor logic

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Body Height

  0.185 inches maximum

• Case Outline Source And Designator

  d-6 mil-m-38510

• Time Rating Per Chacteristic

  125.00 nanoseconds maximum propagation delay time, low to high level output and 125.00 nanoseconds maximum propagation delay time, high to low level output

• Test Data Document

  96906-mil-std-883 standard (includes industry or association standards, individual manufactureer standards, etc.).

• Features Provided

  monolithic and programmable and schottky and hermetically sealed and burn in and bipolar

• Bit Quantity (Non-Core)

  8192

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Memory Device Type

  rom

• Body Width

  0.220 inches minimum and 0.310 inches maximum

• Inclosure Material

  ceramic

• Terminal Surface Treatment

  solder

• Input Circuit Pattern

  12 input

• Body Length

  0.960 inches maximum

• Terminal Type And Quantity

  18 printed circuit

• Inclosure Configuration

  dual-in-line

• Maximum Power Dissipation Rating

  715.0 milliwatts

• Word Quantity (Non-Core)

  2048