NSN: 5962-01-234-8034

Technical Characteristics

• Memory Device Type

  rom

• Word Quantity

  2048

• Input Circuit Pattern

  13 input

• Time Rating Per Chacteristic

  450.00 nanoseconds maximum propagation delay time, low to high level output and 450.00 nanoseconds maximum propagation delay time, high to low level output

• Voltage Rating And Type Per Characteristic

  -0.3 volts minimum power source and 6.0 volts maximum power source

• Terminal Surface Treatment

  solder

• Bit Quantity

  16384

• Output Logic Form

  metal oxide-semiconductor logic

• Features Provided

  ultraviolet erasable and programmable and static operation

• Storage Temp Range

  -65.0/+125.0 deg celsius

• Operating Temp Range

  -0.0/+70.0 deg celsius

• Maximum Power Dissipation Rating

  525.0 milliwatts