NSN: 5962-01-235-3440

Technical Characteristics

• Memory Device Type

  pal

• Current Rating Per Characteristic

  90.00 milliamperes reverse current, dc absolute

• Voltage Rating And Type Per Characteristic

  -0.5 volts minimum power source and 7.0 volts maximum power source

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Time Rating Per Chacteristic

  35.00 nanoseconds maximum propagation delay

• Inclosure Material

  ceramic

• Terminal Surface Treatment

  solder

• Input Circuit Pattern

  12 input

• Terminal Type And Quantity

  20 printed circuit

• Operating Temp Range

  +0.0/+75.0 deg celsius

• Inclosure Configuration

  dual-in-line

• Output Logic Form

  transistor-transistor logic