NSN: 5962-01-243-1000

Technical Characteristics

• Test Data Document

  96906-mil-std-883 standard

• Unpackaged Unit Weight

  3.0 grams

• Memory Device Type

  rom

• Voltage Rating And Type Per Characteristic

  m0.3 volts minimum power source and 7.0 volts maximum power source

• Word Quantity

  2048

• Bit Quantity

  8192

• Output Logic Form

  transistor-transistor logic

• Inclosure Configuration

  dual-in-line

• Features Provided

  hermetically sealed and burn in and high speed and programmable and schottky

• Storage Temp Range

  m65.0/p150.0 deg celsius

• Operating Temp Range

  m55.0/p125.0 deg celsius

• Body Height

  0.170 inches maximum

• Body Width

  0.305 inches maximum

• Body Length

  0.915 inches maximum

• Terminal Type And Quantity

  18 printed circuit

• Time Rating Per Chacteristic

  90.00 nanoseconds maximum propagation delay time,low to high level output and 90.00 nanoseconds maximum propagation delay time,high to low level output

• Terminal Surface Treatment

  solder

• Input Circuit Pattern

  12 input

• Inclosure Material

  ceramic