NSN: 5962-01-245-2546

Technical Characteristics

• Criticality Code Justification

  cbbl

• Output Logic Form

  n-type metal oxide-semiconductor logic

• Part Name Assigned By Controlling Agency

  microcircuit, mos, ultraviolet light erasable, programmable read-only memory, 4k x 8 bits

• Features Provided

  electrostatic sensitive

• Memory Capacity

  4 k x 8 bits

• Storage Temp Range

  -65.0/+125.0 deg celsius

• Operating Temp Range

  -40.0/+85.0 deg celsius

• Memory Device Type

  eprom

• Inclosure Configuration

  dual-in-line

• Terminal Type And Quantity

  24 printed circuit

• Voltage Rating And Type Per Characteristic

  -0.3 volts maximum power source and 6.0 volts maximum power source