NSN: 5962-01-248-8654

Technical Characteristics

• Test Data Document

  81349-mil-m-38510 specification (includes engineering type bulletins, brochures,etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general type

• ~1

  data on certain environmental and performanc

• Output Logic Form

  bipolar metal-oxide semiconductor

• Voltage Rating And Type Per Characteristic

  5.0 volts nominal power source

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Memory Device Type

  pal

• Body Height

  0.185 inches maximum

• Time Rating Per Chacteristic

  45.00 nanoseconds maximum propagation delay time, low to high level output and 45.00 nanoseconds maximum propagation delay time, high to low level output

• Specification/Standard Data

  81349-mil-m-38510/503 government specification

• Maximum Power Dissipation Rating

  2.0 watts

• Current Rating Per Characteristic

  100.00 milliamperes maximum output sink

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Case Outline Source And Designator

  d-8 mil-m-38510

• Body Width

  0.220 inches minimum and 0.310 inches maximum

• Inclosure Material

  ceramic

• Terminal Surface Treatment

  solder

• Body Length

  1.060 inches maximum

• Input Circuit Pattern

  12 input

• Terminal Type And Quantity

  20 printed circuit

• Inclosure Configuration

  dual-in-line

• Features Provided

  hermetically sealed and bipolar and programmable and burn in and monolithic