NSN: 5962-01-259-7672

Technical Characteristics

• Inclosure Configuration

  dual-in-line

• Output Logic Form

  transistor-transistor logic

• Bit Quantity

  8192

• Word Quantity

  2048

• Current Rating Per Characteristic

  170.00 milliamperes maximum supply

• Time Rating Per Chacteristic

  70.00 nanoseconds maximum delay

• Body Width

  0.300 inches maximum

• Maximum Power Dissipation Rating

  825.0 milliwatts

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Features Provided

  hermetically sealed and programmed and bipolar and w/enable and electrostatic se

• Body Length

  0.940 inches maximum

• Body Height

  0.200 inches maximum

• ~1

  nsitive and monolithic

• Inclosure Material

  ceramic

• Input Circuit Pattern

  12 input

• Terminal Surface Treatment

  solder

• Voltage Rating And Type Per Characteristic

  7.0 volts maximum power source

• Memory Device Type

  prom

• Terminal Type And Quantity

  18 printed circuit