NSN: 5962-01-264-2990

Technical Characteristics

• Test Data Document

  81349-mil-m-38510 specification (includes engineering type bulletins, brochures,etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general type

• Output Logic Form

  n-type metal oxide-semiconductor logic

• Bit Quantity (Non-Core)

  65536

• Case Outline Source And Designator

  d-2 mil-m-38510

• Specification/Standard Data

  81349-mil-m-38510/244 government specification

• Word Quantity (Non-Core)

  65536

• Body Height

  0.185 inches maximum

• Voltage Rating And Type Per Characteristic

  -0.5 volts minimum power source and 7.0 volts maximum power source

• Operating Temp Range

  -55.0/+110.0 deg celsius

• Terminal Type And Quantity

  16 printed circuit

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Memory Device Type

  rom

• Body Length

  0.840 inches maximum

• Time Rating Per Chacteristic

  150.00 nanoseconds maximum propagation delay time, low to high level output and 150.00 nanoseconds maximum propagation delay time, high to low level output

• Maximum Power Dissipation Rating

  1.0 watts

• Terminal Surface Treatment

  solder

• Features Provided

  burn in and dynamic and monolithic and hermetically sealed and w/strobe

• Input Circuit Pattern

  12 input

• Inclosure Material

  ceramic and glass

• Inclosure Configuration

  dual-in-line

• Body Width

  0.310 inches maximum

• ~1

  data on certain environmental and performanc