NSN: 5962-01-264-5239

Technical Characteristics

• Current Rating Per Characteristic

  100.00 milliamperes forward current, maximum peak total value not applicable

• Memory Device Type

  pal

• Body Width

  0.342 inches minimum and 0.358 inches maximum

• Time Rating Per Chacteristic

  30.00 nanoseconds maximum propagation delay time, low to high level output and 30.00 nanoseconds maximum propagation delay time, high to low level output

• Voltage Rating And Type Per Characteristic

  -0.5 volts minimum power source and 7.0 volts maximum power source

• Terminal Type And Quantity

  20 leadless

• Test Data Document

  96906-mil-std-883 standard (includes industry or association standards, individual manufactureer standards, etc.).

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Inclosure Configuration

  leadless flat pack

• Inclosure Material

  ceramic

• Maximum Power Dissipation Rating

  1.0 watts

• Terminal Surface Treatment

  solder

• Input Circuit Pattern

  12 input

• Case Outline Source And Designator

  c-2 mil-m-38510

• Body Length

  0.342 inches minimum and 0.358 inches maximum

• Output Logic Form

  transistor-transistor logic

• Body Height

  0.060 inches minimum and 0.100 inches maximum

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Features Provided

  burn in and hermetically sealed and programmable and positive outputs