NSN: 5962-01-272-8229

Technical Characteristics

• Features Provided

  monolithic and hermetically sealed and burn in and w/resistor

• Voltage Rating And Type Per Characteristic

  18.0 volts maximum power source

• Design Function And Quantity

  4 gate, nand

• Inclosure Configuration

  dual-in-line

• Body Width

  0.265 inches nominal

• Terminal Surface Treatment

  solder

• Inclosure Material

  ceramic

• Terminal Type And Quantity

  16 printed circuit

• Output Logic Form

  complementary-metal oxide-semiconductor logic

• Test Data Document

  96906-mil-std-883 standard (includes industry or association standards, individual manufactureer standards, etc.).

• Maximum Power Dissipation Rating

  160.0 milliwatts

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Body Length

  0.870 inches maximum

• Time Rating Per Chacteristic

  200.00 nanoseconds maximum propagation delay time, low to high level output and 200.00 nanoseconds maximum propagation delay time, high to low level output

• Body Height

  0.185 inches maximum

• Storage Temp Range

  -65.0/+125.0 deg celsius