NSN: 5962-01-281-6644

Technical Characteristics

• Memory Device Type

  rom

• Inclosure Material

  ceramic

• Terminal Surface Treatment

  solder

• Maximum Power Dissipation Rating

  525.0 milliwatts

• Inclosure Configuration

  dual-in-line

• Word Quantity (Non-Core)

  2048

• Terminal Type And Quantity

  24 printed circuit

• Input Circuit Pattern

  14 input

• Body Height

  0.160 inches maximum

• Bit Quantity (Non-Core)

  16384

• Time Rating Per Chacteristic

  450.00 nanoseconds maximum propagation delay time, low to high level output and 450.00 nanoseconds maximum propagation delay time, high to low level output

• Body Length

  1.130 inches minimum and 1.260 inches maximum

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Voltage Rating And Type Per Characteristic

  26.5 volts maximum power source

• Storage Temp Range

  -65.0/+125.0 deg celsius

• Output Logic Form

  metal oxide-semiconductor logic

• Features Provided

  ultraviolet erasable and electrostatic sensitive and w/enable and hermetically sealed and programmable

• Test Data Document

  96906-mil-std-883 standard (includes industry or association standards, individual manufactureer standards, etc.).

• Body Width

  0.475 inches minimum and 0.530 inches maximum