NSN: 5962-01-282-6508

Technical Characteristics

• Output Logic Form

  transistor-transistor logic

• End Item Identification

  p-3 acft

• Inclosure Configuration

  dual-in-line

• Memory Device Type

  eprom

• Inclosure Material

  silicon

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Features Provided

  hermetically sealed and programmable and burn in

• Voltage Rating And Type Per Characteristic

  2.4 volts nominal high level output

• Operating Temp Range

  -55.0/+125.0 deg celsius