NSN: 5962-01-289-7422

Technical Characteristics

• Test Data Document

  96906-mil-std-883 standard (includes industry or association standards, individual manufactureer standards, etc.).

• Current Rating Per Characteristic

  100.00 milliamperes forward current, nonrepetitive, maximum peak total value nominal

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Body Width

  0.220 inches minimum and 0.310 inches maximum

• Inclosure Material

  ceramic

• Terminal Surface Treatment

  solder

• Part Name Assigned By Controlling Agency

  20-input 10-output and-or invert gate array

• Voltage Rating And Type Per Characteristic

  -0.5 volts maximum power source and 12.0 volts maximum power source

• Case Outline Source And Designator

  d-9 mil-m-38510

• Inclosure Configuration

  dual-in-line

• Terminal Type And Quantity

  24 printed circuit

• Maximum Power Dissipation Rating

  1.2 watts

• Output Logic Form

  transistor-transistor logic

• Features Provided

  bipolar and monolithic and hermetically sealed

• Time Rating Per Chacteristic

  35.00 nanoseconds maximum propagation delay time, low to high level output and 35.00 nanoseconds maximum propagation delay time, high to low level output

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Memory Device Type

  pal

• Input Circuit Pattern

  20 input

• Body Length

  1.250 inches maximum

• Body Height

  0.185 inches maximum