NSN: 5962-01-294-6725

Technical Characteristics

• Inclosure Material

  ceramic or plastic

• Memory Device Type

  prom

• Features Provided

  programmed and 3-state output and high impedance and w/enable and monolithic

• Current Rating Per Characteristic

  185.00 milliamperes reverse current, dc absolute

• Voltage Rating And Type Per Characteristic

  -0.3 volts minimum power source and 7.0 volts maximum power source

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Output Logic Form

  transistor-transistor logic

• Bit Quantity (Non-Core)

  16384

• Input Circuit Pattern

  14 input

• Terminal Type And Quantity

  24 printed circuit

• Word Quantity (Non-Core)

  2048

• Inclosure Configuration

  dual-in-line

• Terminal Surface Treatment

  solder

• Time Rating Per Chacteristic

  100.00 nanoseconds maximum access

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Test Data Document

  96906-mil-std-883 standard (includes industry or association standards, individual manufactureer standards, etc.).