NSN: 5962-01-299-4296

Technical Characteristics

• Inclosure Configuration

  dual-in-line

• Output Logic Form

  transistor-transistor logic

• Word Quantity

  64

• Special Features

  non-volatile static ram device;static sensitive;ceramic-dipped;n-channel floating gate

• Bit Quantity

  256

• Design Function And Quantity

  1 gate

• Case Outline Source And Designator

  to-4 joint electron device engineering council