NSN: 5962-01-303-0771

Technical Characteristics

• Features Provided

  programmable and erasable and static operation and high speed

• Inclosure Configuration

  dual-in-line

• Bit Quantity

  16384

• Word Quantity

  2048

• Memory Device Type

  rom

• Terminal Type And Quantity

  24 printed circuit

• Maximum Power Dissipation Rating

  720.0 milliwatts

• Inclosure Material

  ceramic

• Output Logic Form

  n-type metal oxide-semiconductor logic

• Input Circuit Pattern

  12 input

• Terminal Surface Treatment

  solder

• Voltage Rating And Type Per Characteristic

  20.0 volts maximum power source