NSN: 5962-01-308-6356

Technical Characteristics

• Features Provided

  bipolar and hermetically sealed and programmable and w/enable and schottky

• Maximum Power Dissipation Rating

  925.0 milliwatts

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Memory Device Type

  rom

• Inclosure Material

  ceramic

• Voltage Rating And Type Per Characteristic

  -0.5 volts maximum power source and 7.0 volts maximum power source

• Terminal Surface Treatment

  solder

• Input Circuit Pattern

  12 input

• Operating Temp Range

  +0.0/+75.0 deg celsius

• Body Height

  0.080 inches minimum and 0.205 inches maximum

• Inclosure Configuration

  dual-in-line

• Body Width

  0.360 inches minimum and 0.405 inches maximum

• Word Quantity (Non-Core)

  512

• Output Logic Form

  transistor-transistor logic

• Terminal Type And Quantity

  22 printed circuit

• Bit Quantity (Non-Core)

  4096

• Body Length

  1.045 inches minimum and 1.110 inches maximum

• Time Rating Per Chacteristic

  40.00 nanoseconds maximum propagation delay time, low to high level output and 40.00 nanoseconds maximum propagation delay time, high to low level output