NSN: 5962-01-349-2196

Technical Characteristics

• Criticality Code Justification

  feat

• Memory Device Type

  pal

• Part Name Assigned By Controlling Agency

  and gate array

• Voltage Rating And Type Per Characteristic

  -0.5 volts minimum power source and 7.0 volts maximum power source

• Special Features

  nuclear hardness critical item

• Test Data Document

  96906-mil-std-883 standard (includes industry or association standards, individual manufactureer standards, etc.).

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Time Rating Per Chacteristic

  40.00 nanoseconds maximum propagation delay

• Inclosure Material

  ceramic

• Terminal Surface Treatment

  solder

• Current Rating Per Characteristic

  100.00 milliamperes reverse current, dc absolute

• Features Provided

  programmable and hermetically sealed and monolithic and radiation hardened

• Inclosure Configuration

  dual-in-line

• Terminal Type And Quantity

  24 printed circuit

• Input Circuit Pattern

  14 input

• Output Logic Form

  transistor-transistor logic