NSN: 5962-01-349-4312

Technical Characteristics

• Output Logic Form

  transistor-transistor logic

• Features Provided

  high impedance and w/disable and monolithic and bipolar and programmable

• Maximum Power Dissipation Rating

  300.0 milliwatts

• Inclosure Configuration

  dual-in-line

• Part Name Assigned By Controlling Agency

  and-or invert gate array

• Terminal Type And Quantity

  20 printed circuit

• Current Rating Per Characteristic

  50.00 milliamperes reverse current, dc absolute

• Time Rating Per Chacteristic

  75.00 nanoseconds maximum propagation delay time, high to low level output and 75.00 nanoseconds maximum propagation delay time, low to high level output

• Body Length

  1.060 inches maximum

• Terminal Surface Treatment

  solder

• Overall Height

  0.400 inches maximum

• Inclosure Material

  ceramic

• Body Width

  0.220 inches minimum and 0.310 inches maximum

• Case Outline Source And Designator

  d-8 mil-m-38510

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Input Circuit Pattern

  10 input

• Test Data Document

  96906-mil-std-883 standard (includes industry or association standards, individual manufactureer standards, etc.).

• Overall Length

  1.060 inches maximum

• Body Height

  0.130 inches minimum and 0.185 inches maximum

• Memory Device Type

  pal

• Voltage Rating And Type Per Characteristic

  -0.5 volts minimum power source and 12.0 volts maximum power source

• Operating Temp Range

  -55.0/+125.0 deg celsius