NSN: 5962-01-351-4979

Technical Characteristics

• Inclosure Material

  ceramic

• Overall Height

  0.400 inches maximum

• Terminal Surface Treatment

  solder

• Input Circuit Pattern

  12 input

• Body Length

  0.960 inches maximum

• Inclosure Configuration

  dual-in-line

• Word Quantity (Non-Core)

  2048

• Output Logic Form

  transistor-transistor logic

• Maximum Power Dissipation Rating

  950.0 milliwatts

• Time Rating Per Chacteristic

  55.00 nanoseconds maximum propagation delay time, high to low level output and 55.00 nanoseconds maximum propagation delay time, low to high level output

• Overall Length

  0.960 inches maximum

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Current Rating Per Characteristic

  185.00 milliamperes reverse current, dc absolute

• Body Height

  0.130 inches minimum and 0.185 inches maximum

• Case Outline Source And Designator

  d-6 mil-m-38510

• Voltage Rating And Type Per Characteristic

  -0.5 volts minimum power source and 7.0 volts maximum power source

• Features Provided

  programmed and schottky and bipolar and high impedance and w/active pull-up and 3-state output and w/enable

• Memory Device Type

  prom

• Test Data Document

  96906-mil-std-883 standard (includes industry or association standards, individual manufactureer standards, etc.).

• Bit Quantity (Non-Core)

  8192

• Terminal Type And Quantity

  16 printed circuit

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Body Width

  0.220 inches minimum and 0.310 inches maximum