NSN: 5962-01-352-9933

Technical Characteristics

• Memory Device Type

  pal

• Nuclear Hardness Critical Feature

  hardened

• Body Length

  0.540 inches maximum

• Terminal Type And Quantity

  20 flat leads

• Body Width

  0.245 inches minimum and 0.300 inches maximum

• Voltage Rating And Type Per Characteristic

  -0.5 volts minimum power source and 7.0 volts maximum power source

• Maximum Power Dissipation Rating

  1.1 watts

• Special Features

  nuclear hardness critical items

• Time Rating Per Chacteristic

  25.00 nanoseconds maximum delay

• Case Outline Source And Designator

  f-9 mil-m-38510

• Test Data Document

  96906-mil-std-883 standard (includes industry or association standards, individual manufactureer standards, etc.).

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Inclosure Material

  ceramic

• Terminal Surface Treatment

  solder

• Part Name Assigned By Controlling Agency

  and-or invert gate array

• Body Height

  0.045 inches minimum and 0.100 inches maximum

• Output Logic Form

  transistor-transistor logic

• Features Provided

  hermetically sealed and burn in and monolithic and electrostatic sensitive

• Inclosure Configuration

  flat pack

• Input Circuit Pattern

  16 input

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Current Rating Per Characteristic

  190.00 milliamperes reverse current, dc absolute