NSN: 5962-01-367-8192

Technical Characteristics

• Time Rating Per Chacteristic

  50.00 nanoseconds maximum propagation delay time, high to low level output and 50.00 nanoseconds maximum propagation delay time, low to high level output

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Voltage Rating And Type Per Characteristic

  -0.5 volts minimum power source and 12.0 volts maximum power source

• Features Provided

  bipolar and bidirectional and high impedance and programmable and w/clock and monolithic

• Memory Device Type

  pal

• Input Circuit Pattern

  20 input

• Body Height

  0.185 inches maximum

• Test Data Document

  96906-mil-std-883 standard (includes industry or association standards, individual manufactureer standards, etc.).

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Body Width

  0.220 inches minimum and 0.310 inches maximum

• Inclosure Material

  ceramic

• Current Rating Per Characteristic

  105.00 milliamperes reverse current, dc absolute

• Terminal Surface Treatment

  solder

• Part Name Assigned By Controlling Agency

  and-or invert gate array

• Case Outline Source And Designator

  d-9 mil-m-38510

• Inclosure Configuration

  dual-in-line

• Terminal Type And Quantity

  24 printed circuit

• Maximum Power Dissipation Rating

  1.2 watts

• Body Length

  1.280 inches maximum

• Output Logic Form

  transistor-transistor logic