NSN: 5962-01-368-5362

Technical Characteristics

• Output Logic Form

  bipolar metal-oxide semiconductor

• Part Name Assigned By Controlling Agency

  microcircuit,digital memory,bipolar programmable logic

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Features Provided

  programmable

• Memory Device Type

  pal

• Hybrid Technology Type

  monolithic

• ~1

  data on certain environmental and performanc

• Test Data Document

  81349-mil-m-38510 specification (includes engineering type bulletins, brochures,etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general type

• Maximum Power Dissipation Rating

  1.2 watts

• Current Rating Per Characteristic

  100.00 milliamperes reverse current, dc nominal

• Terminal Type And Quantity

  24 printed circuit

• Inclosure Configuration

  dual-in-line

• End Item Identification

  eots e/i fscm 76301

• Case Outline Source And Designator

  d-9 mil-m-38510

• Voltage Rating And Type Per Characteristic

  4.5 volts minimum positive power supply span and -0.5 volts minimum applied and 7.0 volts maximum applied and 5.5 volts maximum positive power supply span

• Terminal Surface Treatment

  solder

• Specification/Standard Data

  67268-5962-86053 government standard

• Inclosure Material

  ceramic

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Nondefinitive Spec/Std Data

  03 type and l case and a finish

• Input Circuit Pattern

  22 input