NSN: 5962-01-369-4306

Technical Characteristics

• Memory Device Type

  prom

• Maximum Power Dissipation Rating

  880.0 milliwatts

• Features Provided

  burn in and bipolar and monolithic and programmed

• Inclosure Material

  ceramic

• Inclosure Configuration

  dual-in-line

• Input Circuit Pattern

  13 input

• Bit Quantity

  4096

• Voltage Rating And Type Per Characteristic

  -0.5 volts minimum power source and 7.0 volts maximum power source

• Test Data Document

  96906-mil-std-883 standard

• Terminal Type And Quantity

  20 printed circuit

• Body Length

  1.060 inches maximum

• Body Width

  0.220 inches minimum and 0.310 inches maximum

• Body Height

  0.185 inches maximum

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Case Outline Source And Designator

  d-8 mil-m-38510

• Terminal Surface Treatment

  solder