NSN: 5962-01-369-6838
Microcircuits, Electronic
MICROCIRCUIT,MEMORY
5962 - Microcircuits, Electronic
MICROCIRCUIT,MEMORY
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Technical Characteristics
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~1
data on certain environmental and performanc
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Test Data Document
81349-mil-m-38510 specification (includes engineering type bulletins, brochures,etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general type
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Time Rating Per Chacteristic
55.00 nanoseconds af output megawatts
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Current Rating Per Characteristic
100.00 milliamperes reverse current, dc nominal
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Departure From Cited Designator
altered by programming,marking & testing
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Nondefinitive Spec/Std Data
j case and 02 type and a finish and 214 number
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Terminal Type And Quantity
24 printed circuit
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Inclosure Configuration
dual-in-line
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Voltage Rating And Type Per Characteristic
7.0 volts maximum total supply and 4.5 volts minimum positive power supply span and 5.5 volts nominal absolute input and -0.3 volts minimum total supply and 5.5 volts maximum positive power supply span
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Specification/Standard Data
67268-82009 government standard and 56232-1219253 manufacturers specification control
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Features Provided
programmed and schottky
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Part Name Assigned By Controlling Agency
microcircuit,digital,schottky,bipolar 65,536 bit (8k x 8) programmable read-only memory (prom),monolithic silicon
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Terminal Surface Treatment
solder
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Inclosure Material
ceramic
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Case Outline Source And Designator
d-3 mil-m-38510
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Storage Temp Range
-65.0/+150.0 deg celsius
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Memory Device Type
prom
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End Item Identification
an/fps-124
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Hybrid Technology Type
monolithic
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Bit Quantity (Non-Core)
65536
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Operating Temp Range
-55.0/+125.0 deg celsius
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Output Logic Form
bipolar metal-oxide semiconductor
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Maximum Power Dissipation Rating
1.04 watts