NSN: 5962-01-369-9248

Technical Characteristics

• Test Data Document

  81349-mil-m-38510 specification (includes engineering type bulletins, brochures,etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general type

• Part Name Assigned By Controlling Agency

  microcircuit,digital,schottky,bipolar 65,536 bit (8k x 8) programmable read-only memory (prom),monolithic silicon

• Features Provided

  programmed and schottky

• Specification/Standard Data

  67268-82009 government standard and 56232-1219253 manufacturers specification control

• Inclosure Configuration

  dual-in-line

• Terminal Type And Quantity

  24 printed circuit

• Departure From Cited Designator

  altered by programming,marking & testing

• Current Rating Per Characteristic

  100.00 milliamperes reverse current, dc nominal

• Time Rating Per Chacteristic

  55.00 nanoseconds af output megawatts

• Nondefinitive Spec/Std Data

  a finish and j case and 02 type and 208 number

• Voltage Rating And Type Per Characteristic

  -0.3 volts minimum total supply and 5.5 volts nominal absolute input and 4.5 volts minimum positive power supply span and 7.0 volts maximum total supply and 5.5 volts maximum positive power supply span

• Maximum Power Dissipation Rating

  1.04 watts

• Output Logic Form

  bipolar metal-oxide semiconductor

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Bit Quantity (Non-Core)

  65536

• Hybrid Technology Type

  monolithic

• End Item Identification

  an/fps-124

• Memory Device Type

  prom

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Case Outline Source And Designator

  d-3 mil-m-38510

• Inclosure Material

  ceramic

• Terminal Surface Treatment

  solder

• ~1

  data on certain environmental and performanc