NSN: 5962-01-369-9729

Microcircuits, Electronic

MICROCIRCUIT,MEMORY

5962 - Microcircuits, Electronic

MICROCIRCUIT,MEMORY

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Technical Characteristics

  • ~1

    data on certain environmental and performanc

  • Time Rating Per Chacteristic

    250.00 nanoseconds af output megawatts

  • Test Data Document

    81349-mil-m-38510 specification (includes engineering type bulletins, brochures,etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general type

  • Operating Temp Range

    -55.0/+125.0 deg celsius

  • Part Name Assigned By Controlling Agency

    microcircuit,digital,262,144 bit mos,ultraviolet erasable programmable read-only memory (eprom),monolithic silicon

  • Bit Quantity (Non-Core)

    262144

  • Hybrid Technology Type

    monolithic

  • Features Provided

    programmed and ultraviolet erasable

  • End Item Identification

    an/fps-124

  • Storage Temp Range

    -65.0/+150.0 deg celsius

  • Inclosure Material

    ceramic

  • Maximum Power Dissipation Rating

    1.0 watts

  • Terminal Surface Treatment

    solder

  • Specification/Standard Data

    81349--38510/224 government specification and 56232-1219254 manufacturers source control

  • Terminal Type And Quantity

    28 printed circuit

  • Case Outline Source And Designator

    d-10 mil-m-38510

  • Memory Device Type

    eprom

  • Inclosure Configuration

    dual-in-line

  • Current Rating Per Characteristic

    50.00 milliamperes reverse current, dc blank

  • Voltage Rating And Type Per Characteristic

    -0.6 volts minimum total supply and 6.25 volts maximum total supply

  • Capitance Rating Per Characteristic

    6.00 input picofarads maximum and 12.00 output picofarads maximum

  • Departure From Cited Designator

    altered by programming,marking & testing

  • Nondefinitive Spec/Std Data

    y case and a finish and 01 type and b class and 204 number

  • Output Logic Form

    metal-nitride-oxide semiconductor

Certified to
AS6081 Methods

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